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1

Doping compensation for increased robustness of fast recovery silicon diodes

J. Vobecký, V. Záhlava, V. Komarnitskyy

Journal:

Microelectronics Reliability

Année:

2010

Langue:

english

Fichier:

PDF, 689 KB

english, 2010

2

Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities

Perpiñà, X., Jordà, X., Vellvehi, M., Vobecky, J., Mestres, N.

Journal:

Journal of The Electrochemical Society

Année:

2010

Langue:

english

Fichier:

PDF, 1.04 MB

english, 2010

3

Platinum in-diffusion controlled by radiation defects for advanced lifetime control in high power silicon devices

P. Hazdra, J. Vobecký

Journal:

Materials Science and Engineering: B

Année:

2005

Langue:

english

Fichier:

PDF, 359 KB

english, 2005

4

Advanced Local Lifetime Control for Higher Reliability of Power Devices

J. Vobecký, P. Hazdra

Journal:

Microelectronics Reliability

Année:

2003

Fichier:

PDF, 702 KB

2003

5

High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects

J. Vobecky, P. Hazdra

Journal:

IEEE Electron Device Letters

Année:

2005

Langue:

english

Fichier:

PDF, 115 KB

english, 2005

6

Crossing point current of electron and proton irradiated power P-i-N diodes

J. Vobecký, P. Hazdra, O. Humbel, N. Galster

Journal:

Microelectronics Reliability

Année:

2000

Langue:

english

Fichier:

PDF, 224 KB

english, 2000

7

On the Performance of Multiobjective Evolutionary Algorithms in Automatic Parameter Extraction of Power Diodes

Prada, Daniele, Bellini, Marco, Stevanovic, Ivica, Lemaitre, Laurent, Victory, James, Vobecky, Jan, Sacco, Riccardo, Lauritzen, Peter O.

Journal:

IEEE Transactions on Power Electronics

Année:

2015

Langue:

english

Fichier:

PDF, 3.76 MB

english, 2015

8

[IEEE 2004 24th International Conference on Microelectronics - Nis, Serbia (16-19 May 2004)] 2004 24th International Conference on Microelectronics (IEEE Cat. No.04TH8716) - Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode

Vobecky, J., Hazdra, P.

Année:

2004

Langue:

english

Fichier:

PDF, 267 KB

english, 2004

9

Wide energy range gamma-ray calibration source

Kroupa, M, Granja, C, Janout, Z, Kralik, M, Krejci, F, Owens, A, Pospisil, S, Quarati, F, Solc, J, Vobecky, M

Journal:

Journal of Instrumentation

Année:

2011

Langue:

english

Fichier:

PDF, 997 KB

english, 2011

10

Guest Editorial Special Issue on Power Semiconductor Devices and Smart Power IC Technologies

Ng, Wai Tung, Udrea, Florin, Omura, Ichiro, Vobecky, Jan, Disney, Don

Journal:

IEEE Transactions on Electron Devices

Année:

2017

Langue:

english

Fichier:

PDF, 581 KB

english, 2017

11

Advanced methods for diagnostics of the GTO thyristor

M. Hátle, J. Vobecký

Journal:

Microelectronics Journal

Année:

1993

Langue:

english

Fichier:

PDF, 711 KB

english, 1993

12

Molybdenum and low-temperature annealing of a silicon power P–i–N diode

J. Vobecký, V. Komarnitskyy, V. Záhlava

Journal:

Microelectronics Reliability

Année:

2011

Langue:

english

Fichier:

PDF, 906 KB

english, 2011

13

Local lifetime control by light ion irradiation: impact on blocking capability of power P–i–N diode

P Hazdra, K Brand, J Rubeš, J Vobecký

Journal:

Microelectronics Journal

Année:

2001

Langue:

english

Fichier:

PDF, 239 KB

english, 2001

14

Impact of the electron, proton and helium irradiation on the forward I–V characteristics of high-power P–i–N diode

J Vobecký, P Hazdra, V Záhlava

Journal:

Microelectronics Reliability

Année:

2003

Langue:

english

Fichier:

PDF, 218 KB

english, 2003

15

Reliability of Contacts for Press-Pack High-Power Devices

J. Vobecký, D. Kolesnikov

Journal:

Microelectronics Reliability

Année:

2005

Langue:

english

Fichier:

PDF, 945 KB

english, 2005

16

Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons

P. Hazdra, J. Vobecký, H. Dorschner, K. Brand

Journal:

Microelectronics Journal

Année:

2004

Langue:

english

Fichier:

PDF, 433 KB

english, 2004

17

Bromide kinetics and distribution in the rat. II

S. Pavelka, A. Babický, M. Vobecký, J. Lener

Journal:

Biological Trace Element Research

Année:

2000

Langue:

english

Fichier:

PDF, 175 KB

english, 2000

18

Bromide kinetics and distribution in the rat. I

S. Pavelka, A. Babický, M. Vobecký, J. Lener, E. Švandová

Journal:

Biological Trace Element Research

Année:

2000

Langue:

english

Fichier:

PDF, 200 KB

english, 2000

19

Neutron-deficient isotopes of terbium with half-life of18hours

J. Frána, I. Řezanka, M. Vobecký, V. Hušák

Journal:

Czechoslovak Journal of Physics

Année:

1960

Langue:

english

Fichier:

PDF, 149 KB

english, 1960

20

Cation-exchange chromatographic separation of mendelevium and fermium using α-hydroxy-α-methylbutyrate

M. Vobecký, G. V. Buklanov, O. D. Maslov, L. I. Salamatin, D. Schumann, Won Gwan Sen, A. B. Yakushev

Journal:

Journal of Radioanalytical and Nuclear Chemistry

Année:

1991

Langue:

english

Fichier:

PDF, 180 KB

english, 1991

21

Multi-element standard for routine instrumental activation analysis of trace elements in rocks and tectites

J. Kuncíř, J. Benada, Z. Řanda, M. Vobecký

Journal:

Journal of Radioanalytical and Nuclear Chemistry

Année:

1970

Langue:

english

Fichier:

PDF, 461 KB

english, 1970

22

Optimization of power diode characteristics by means of ion irradiation

Vobecky, J., Hazdra, P., Homola, J.

Journal:

IEEE Transactions on Electron Devices

Année:

1996

Langue:

english

Fichier:

PDF, 974 KB

english, 1996

23

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - Field Shielded Anode (FSA) concept enabling higher temperature operation of fast recovery diodes

Matthias, S., Vobecky, J., Corvasce, C., Kopta, A., Cammarata, M.

Année:

2011

Langue:

english

Fichier:

PDF, 926 KB

english, 2011

24

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Fast Recovery Diode With Novel Local Lifetime Control

Vobecky, J., Hazdra, P.

Année:

2006

Langue:

english

Fichier:

PDF, 2.94 MB

english, 2006

25

High-power silicon P–i–N diode with cathode shorts: The impact of electron irradiation

Pína, L., Vobecký, J.

Journal:

Microelectronics Reliability

Année:

2013

Langue:

english

Fichier:

PDF, 1.16 MB

english, 2013

26

ON-state characteristics of proton irradiated 4H–SiC Schottky diode: The calibration of model parameters for device simulation

Vobecký, J., Hazdra, P., Záhlava, V., Mihaila, A., Berthou, M.

Journal:

Solid-State Electronics

Année:

2014

Langue:

english

Fichier:

PDF, 1.45 MB

english, 2014

27

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applications

Rahimo, M., Kopta, A., Schlapbach, U., Vobecky, J., Schnell, R., Klaka, S.

Année:

2009

Langue:

english

Fichier:

PDF, 766 KB

english, 2009

28

High-power P-i-N diode with the local lifetime control based on the proximity gettering of platinum

Vobecky, J., Hazdra, P.

Journal:

IEEE Electron Device Letters

Année:

2002

Langue:

english

Fichier:

PDF, 182 KB

english, 2002

29

[IEEE 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings - Toulouse, France (22-25 May 2000)] 12th International Symposium on Power Semiconductor Devices & ICs. Proceedings (Cat. No.00CH37094) - A new degree of freedom in diode optimization: arbitrary axial lifetime profiles by means of ion irradiation

Hazdra, P., Vobecky, J., Galster, N., Humbel, O., Dalibor, T.

Année:

2000

Langue:

english

Fichier:

PDF, 368 KB

english, 2000

30

[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - Crossing point current of power P-i-N diodes: impact of lifetime treatment

Vobecky, J., Hazdra, P., Humbel, O., Galster, N.

Année:

1999

Langue:

english

Fichier:

PDF, 329 KB

english, 1999

31

High-Power Silicon p-i-n Diode With the Radiation Enhanced Diffusion of Gold

Vobecky, Jan, Zahlava, Vit, Hazdra, Pavel

Journal:

IEEE Electron Device Letters

Année:

2014

Langue:

english

Fichier:

PDF, 591 KB

english, 2014

32

[IEEE 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 - Alpbach, Austria (17-22 Sept. 2000)] 2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432) - Effect of defects produced by MeV H and He ion implantation on characteristics of power silicon P-i-N diodes

Hazdra, P., Brand, K., Vobecky, J.

Année:

2000

Langue:

english

Fichier:

PDF, 389 KB

english, 2000

33

[IEEE International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) - Smolenice, Slovakia (16-18 Oct. 2000)] ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386) - Lifetime engineering in high-power devices

Année:

2000

Langue:

english

Fichier:

PDF, 521 KB

english, 2000

34

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT

Vobecky, J., Rahimo, M., Kopta, A., Linder, S.

Année:

2008

Langue:

english

Fichier:

PDF, 468 KB

english, 2008

35

Factor Analysis of a French-Canadian Form of the Parental Attitude Research Instrument

De Man, Anton F., Balkou, Steven T., Vobecky, Joseph

Journal:

The Journal of Psychology

Année:

1985

Langue:

english

Fichier:

PDF, 530 KB

english, 1985

36

[IEEE IC's (ISPSD) - Orlando, FL, USA (2008.05.18-2008.05.22)] 2008 20th International Symposium on Power Semiconductor Devices and IC's - A High Current 3300V Module Employing Reverse Conducting IGBTs Setting a New Benchmark in Output Power Capability

Rahimo, M., Schlapbach, U., Kopta, A., Vobecky, J., Schneider, D., Baschnagel, A.

Année:

2008

Langue:

english

Fichier:

PDF, 538 KB

english, 2008

37

Production Cross Sections and Yields of Long Lived 44Τi from 100 MeV Proton Bombardment of Vanadium

Zaitseva, N. G., Rurarz, E., Tchikalov, Μ. B., Vobecky, M., Khalkin, V. A., Popinenkova, L. M.

Journal:

Radiochimica Acta

Année:

1994

Langue:

english

Fichier:

PDF, 367 KB

english, 1994

38

[IEEE 2015 17th European Conference on Power Electronics and Applications (EPE '15 ECCE Europe) - Geneva, Switzerland (2015.9.8-2015.9.10)] 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe) - Recent advancements in IGCT technologies for high power electronics applications

Vemulapati, Umamaheswara, Rahimo, Munaf, Arnold, Martin, Wikstrom, Tobias, Vobecky, Jan, Backlund, Bjorn, Stiasny, Thomas

Année:

2015

Langue:

english

Fichier:

PDF, 2.06 MB

english, 2015

39

[IEEE 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Prague, Czech Republic (2016.6.12-2016.6.16)] 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Fast recovery high-power P-i-N diode with heavily shorted cathode for enhanced ruggedness in the circuits with IGCTs

Pina, Libor, Vobecky, Jan

Année:

2016

Langue:

english

Fichier:

PDF, 1.68 MB

english, 2016

40

Multimodal imaging with hybrid semiconductor detectors Timepix for an experimental MRI-SPECT system

Zajicek, J, Jakubek, J, Burian, M, Vobecky, M, Fauler, A, Fiederle, M, Zwerger, A

Journal:

Journal of Instrumentation

Année:

2013

Langue:

english

Fichier:

PDF, 2.28 MB

english, 2013

41

[IEEE 2018 13th IEEE International Conference on Automatic Face & Gesture Recognition (FG 2018) - Xi'an (2018.5.15-2018.5.19)] 2018 13th IEEE International Conference on Automatic Face & Gesture Recognition (FG 2018) - Detecting Decision Ambiguity from Facial Images

Jahoda, Pavel, Vobecky, Antonin, Cech, Jan, Matas, Jiri

Année:

2018

Langue:

english

Fichier:

PDF, 362 KB

english, 2018

42

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - An advanced soft punch through buffer design for thin wafer IGBTs targeting lower losses and higher operating temperatures up to 200 °C

Buitrago, Elizabeth, Mesemanolis, Athanasios, Papadopoulos, Charalampos, Corvasce, Chiara, Vobecky, Jan, Rahimo, Munaf

Année:

2018

Langue:

english

Fichier:

PDF, 720 KB

english, 2018

43

[IEEE 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Chicago, IL (2018.5.13-2018.5.17)] 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Local lifetime control for enhanced ruggedness of HVDC thyristors

Vobecky, J., Botan, V., Meier, K. U., Tugan, K., Bellini, M.

Année:

2018

Langue:

english

Fichier:

PDF, 1.25 MB

english, 2018

44

TCAD study of DLC coatings for large-area high-power diodes

Reggiani, S., Balestra, L., Gnudi, A., Gnani, E., Baccarani, G., Dobrzynska, J., Vobecký, J., Tosi, C.

Journal:

Microelectronics Reliability

Année:

2018

Langue:

english

Fichier:

PDF, 1.04 MB

english, 2018

45

TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation

Balestra, L., Reggiani, S., Gnudi, A., Gnani, E., Dobrzynska, J., Vobecky, J.

Journal:

IEEE Transactions on Electron Devices

Année:

2020

Fichier:

PDF, 1.32 MB

2020

46

[IEEE 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Vienna, Austria (2020.9.13-2020.9.18)] 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Pushing the Limits of the Maximum Punch-Through Design with an Advanced Buffer for Thin Wafer IGBTs

Buitrago, Elizabeth, Schneider, Nick, Corvasce, Chiara, Vobecky, Jan, De-Michielis, Luca, Rahimo, Munaf

Année:

2020

Fichier:

PDF, 1.01 MB

2020

47

A case-control study of risk factors for large bowel carcinoma

Josef Vobecky, Jaime Caro, Ghislain Devroede

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 516 KB

english, 1983

48

Risk of large-bowel cancer in synthetic fiber manufacture

Josef Vobecky, Ghislain Devroede, Jaime Caro

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 528 KB

english, 1984

49

Sex differences in the changing anatomic distribution of colorectal carcinoma

Josef Vobecky, Charles Leduc, Ghislain Devroede

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 403 KB

english, 1984

50

The reliability of routine pathologic diagnosis of colorectal adenocarcinoma

Josef Vobecky, Charles P. Leduc, Ghislain Devroede, Prometeo Madarnas

Journal:

Année:

1989

Langue:

english

Fichier:

PDF, 514 KB

english, 1989